中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches

文献类型:期刊论文

作者Han, Wei-Wei; Huang, Wei; Zhuo, Shi-Yi; Xin, Jun; Liu, Xue-Chao; Shi, Er-Wei; Zhang, Yue-Fan; Cao, Peng-Hui; Wang, Yu-Tian; Guo, Hui
刊名IEEE ELECTRON DEVICE LETTERS
出版日期2019-02-01
卷号40期号:2页码:271
关键词Photoconductive switch silicon carbide intrinsic photoconductivity pulse-power system switches on-state resistance
ISSN号0741-3106
DOI10.1109/LED.2018.2885787
文献子类Article
英文摘要A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS was precisely measured, where a maximum ON-state photoconductivity of 6.26 (Omega . m)(-1), a minimum ON-state resistivity of 0.16 Omega.m, and an accurate minimum resistance of 1.71 Omega were obtained for SiC substrate. The quantitative relationship between the ON-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.
WOS研究方向Engineering
语种英语
出版者IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
源URL[http://ir.sic.ac.cn/handle/331005/27365]  
专题中国科学院上海硅酸盐研究所
推荐引用方式
GB/T 7714
Han, Wei-Wei,Huang, Wei,Zhuo, Shi-Yi,et al. A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(2):271.
APA Han, Wei-Wei.,Huang, Wei.,Zhuo, Shi-Yi.,Xin, Jun.,Liu, Xue-Chao.,...&Zhang, Yu-Ming.(2019).A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches.IEEE ELECTRON DEVICE LETTERS,40(2),271.
MLA Han, Wei-Wei,et al."A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches".IEEE ELECTRON DEVICE LETTERS 40.2(2019):271.

入库方式: OAI收割

来源:上海硅酸盐研究所

浏览0
下载0
收藏0
其他版本

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。