A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches
文献类型:期刊论文
| 作者 | Han, Wei-Wei; Huang, Wei; Zhuo, Shi-Yi; Xin, Jun; Liu, Xue-Chao; Shi, Er-Wei; Zhang, Yue-Fan; Cao, Peng-Hui; Wang, Yu-Tian; Guo, Hui |
| 刊名 | IEEE ELECTRON DEVICE LETTERS
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| 出版日期 | 2019-02-01 |
| 卷号 | 40期号:2页码:271 |
| 关键词 | Photoconductive switch silicon carbide intrinsic photoconductivity pulse-power system switches on-state resistance |
| ISSN号 | 0741-3106 |
| DOI | 10.1109/LED.2018.2885787 |
| 文献子类 | Article |
| 英文摘要 | A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS was precisely measured, where a maximum ON-state photoconductivity of 6.26 (Omega . m)(-1), a minimum ON-state resistivity of 0.16 Omega.m, and an accurate minimum resistance of 1.71 Omega were obtained for SiC substrate. The quantitative relationship between the ON-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region. |
| WOS研究方向 | Engineering |
| 语种 | 英语 |
| 出版者 | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| 源URL | [http://ir.sic.ac.cn/handle/331005/27365] ![]() |
| 专题 | 中国科学院上海硅酸盐研究所 |
| 推荐引用方式 GB/T 7714 | Han, Wei-Wei,Huang, Wei,Zhuo, Shi-Yi,et al. A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches[J]. IEEE ELECTRON DEVICE LETTERS,2019,40(2):271. |
| APA | Han, Wei-Wei.,Huang, Wei.,Zhuo, Shi-Yi.,Xin, Jun.,Liu, Xue-Chao.,...&Zhang, Yu-Ming.(2019).A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches.IEEE ELECTRON DEVICE LETTERS,40(2),271. |
| MLA | Han, Wei-Wei,et al."A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches".IEEE ELECTRON DEVICE LETTERS 40.2(2019):271. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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