Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors
文献类型:期刊论文
作者 | Lv, Zhengxia; Liu, Dan; Yu, Xiaoqin; Lv, Qianjin; Gao, Bing; Jin, Hehua; Qiu, Song; Men, Chuanling; Song, Qijun; Li, Qingwen |
刊名 | RSC ADVANCES
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出版日期 | 2019 |
卷号 | 9期号:19页码:10578 |
ISSN号 | 2046-2069 |
DOI | 10.1039/c9ra01052a |
文献子类 | Article |
英文摘要 | Semiconducting single-walled carbon nanotubes (s-SWNTs) show great promises in advanced electronics. However, contact resistance between the nanotubes and metal electrode has long been a bottleneck to the development of s-SWNTs in high-performance electronic devices. Here we demonstrate a simple and controllable strategy for enhancing the electrode contact and therefore the performance of s-SWNT thin film transistors by plasma etching treatment, which effectively removes the polymer residues, including the photoresist and the conjugated molecules, adsorbed on the surface of s-SWNTs. As a result, the contact resistance is reduced by 3 times and the carrier mobility rises by up to 70%. Our method is compatible with current silicon semiconductor processing technology, making it a viable effective approach to large-scale application of s-SWNTs in the electronics industry. |
WOS研究方向 | Chemistry |
语种 | 英语 |
出版者 | ROYAL SOC CHEMISTRY |
源URL | [http://ir.sic.ac.cn/handle/331005/27416] ![]() |
专题 | 中国科学院上海硅酸盐研究所 |
推荐引用方式 GB/T 7714 | Lv, Zhengxia,Liu, Dan,Yu, Xiaoqin,et al. Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors[J]. RSC ADVANCES,2019,9(19):10578. |
APA | Lv, Zhengxia.,Liu, Dan.,Yu, Xiaoqin.,Lv, Qianjin.,Gao, Bing.,...&Li, Qingwen.(2019).Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors.RSC ADVANCES,9(19),10578. |
MLA | Lv, Zhengxia,et al."Controllable etching-induced contact enhancement for high-performance carbon nanotube thin-film transistors".RSC ADVANCES 9.19(2019):10578. |
入库方式: OAI收割
来源:上海硅酸盐研究所
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