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Grafting voltage and pharmacological sensitivity in potassium channels

文献类型：期刊论文

作者Lan, Xi1,2; Fan, Chunyan2,3; Ji, Wei2,3; Tian, Fuyun1,2; Xu, Tao2,3; Gao, Zhaobing1,2
刊名CELL RESEARCH
出版日期2016-08
卷号26期号:8页码:935-945
关键词voltage-gated channels K2P channels voltage-sensing domain graft
ISSN号1001-0602
DOI10.1038/cr.2016.57
文献子类Article
英文摘要A classical voltage-gated ion channel consists of four voltage-sensing domains (VSDs). However, the roles of each VSD in the channels remain elusive. We developed a GVTDT (Graft VSD To Dimeric TASK3 channels that lack endogenous VSDs) strategy to produce voltage-gated channels with a reduced number of VSDs. TASK3 channels exhibit a high host tolerance to VSDs of various voltage-gated ion channels without interfering with the intrinsic properties of the TASK3 selectivity filter. The constructed channels, exemplified by the channels grafted with one or two VSDs from Kv7.1 channels, exhibit classical voltage sensitivity, including voltage-dependent opening and closing. Furthermore, the grafted Kv7.1 VSD transfers the potentiation activity of benzbromarone, an activator that acts on the VSDs of the donor channels, to the constructed channels. Our study indicates that one VSD is sufficient to voltage-dependently gate the pore and provides new insight into the roles of VSDs.
WOS关键词DEPENDENT K+ CHANNEL ; GATED PROTON CHANNEL ; C-TYPE INACTIVATION ; GATING CHARGE ; 2-PORE DOMAIN ; ION CHANNELS ; PORE DOMAIN ; EXTRACELLULAR HISTIDINE ; CRYSTAL-STRUCTURE ; SENSING RESIDUES
资助项目State Key Program of Basic Research of China[2013CB910604] ; National Science and Technology Major Project on 'Key New Drug Creation and Manufacturing Program'[2013ZX09103001-016] ; National Natural Science Foundation of China[61327014] ; National Natural Science Foundation of China[91413122] ; National Natural Science Foundation of China[61175103] ; National Natural Science Foundation of China[31127901] ; National Natural Science Foundation of China[31127002] ; National Natural Science Foundation of China[81123004] ; National Natural Science Foundation of China[81461148027] ; Shanghai Municipal Science and Technology Commission[13JC1406700] ; External Cooperation Program of BIC, Chinese Academy of Sciences[1536631KYSB20130003]
WOS研究方向Cell Biology
语种英语
CSCD记录号CSCD:5807065
WOS记录号WOS:000380923900010
出版者INST BIOCHEMISTRY & CELL BIOLOGY
源URL[http://119.78.100.183/handle/2S10ELR8/275944]  
专题神经药理学研究国际科学家工作站
通讯作者Xu, Tao; Gao, Zhaobing
作者单位1.Chinese Acad Sci, Shanghai Inst Mat Med, CAS Key Lab Receptor Res, 555 Zuchongzhi Rd, Shanghai 201203, Peoples R China;
2.Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
3.Chinese Acad Sci, Inst Biophys, Natl Key Lab Biomacromol, 5 Datun Rd, Beijing 100101, Peoples R China;
推荐引用方式
GB/T 7714		 Lan, Xi,Fan, Chunyan,Ji, Wei,et al. Grafting voltage and pharmacological sensitivity in potassium channels[J]. CELL RESEARCH,2016,26(8):935-945.
APA Lan, Xi,Fan, Chunyan,Ji, Wei,Tian, Fuyun,Xu, Tao,&Gao, Zhaobing.(2016).Grafting voltage and pharmacological sensitivity in potassium channels.CELL RESEARCH,26(8),935-945.
MLA Lan, Xi,et al."Grafting voltage and pharmacological sensitivity in potassium channels".CELL RESEARCH 26.8(2016):935-945.

入库方式： OAI收割

来源：上海药物研究所

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