(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O-3 (PLZT) antiferroelectric films with a thickness of about 1.7 mu m were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm(2) over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm(3) at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, Delta T = 8.5 degrees C, was obtained near the phase-transition temperature.