中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 过程工程研究所
  3. 中国科学院过程工程研究所
Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate

文献类型：期刊论文

作者Wang, Huaping1,2; Xue, Xudong; Jiang, Qianqing1,2; Wang, Yanlei4; Geng, Dechao1,2; Cai, Le1,2; Wang, Liping3; Xu, Zhiping5,6; Yu, Gui1,2
刊名JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
出版日期2019-07-17
卷号141期号:28页码:11004-11008
ISSN号0002-7863
DOI10.1021/jacs.9b05705
英文摘要Direct chemical vapor deposition growth of high quality graphene on dielectric substrates holds great promise for practical applications in electronics and optoelectronics. However, graphene growth on dielectrics always suffers from the issues of inhomogeneity and/or poor quality. Here, we first reveal that a novel precursor-modification strategy can successfully suppress the secondary nucleation of graphene to evolve ultrauniform graphene monolayer film on dielectric substrates. A mechanistic study indicates that the hydroxylation of silica substrate weakens the binding between graphene edges and substrate, thus realizing the primary nucleation-dominated growth. Field-effect transistors based on the graphene films show exceptional electrical performance with the charge carrier mobility up to 3800 cm(2) V-1 s(-1) in air, which is much higher than those reported results of graphene films grown on dielectrics.
WOS关键词SINGLE-CRYSTAL GRAPHENE ; WALLED CARBON NANOTUBES ; HIGH-QUALITY GRAPHENE ; LARGE-AREA ; LAYER GRAPHENE ; FILMS ; OXYGEN ; NANOGRAPHENE ; GRAINS
资助项目National Natural Science Foundation of China[61390502] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB 30000000] ; Strategic Priority Research Program of the Chinese Academy of Sciences[XDB 12030100]
WOS研究方向Chemistry
语种英语
WOS记录号WOS:000476684700015
出版者AMER CHEMICAL SOC
资助机构National Natural Science Foundation of China ; Strategic Priority Research Program of the Chinese Academy of Sciences
源URL[http://ir.ipe.ac.cn/handle/122111/30343]  
专题中国科学院过程工程研究所
通讯作者Xu, Zhiping; Yu, Gui
作者单位1.Univ Chinese Acad Sci, Sch Chem Sci, Beijing 100049, Peoples R China
2.Chinese Acad Sci, Beijing Natl Lab Mol Sci, CAS Res Educ Ctr Excellence Mol Sci, Inst Chem, Beijing 100190, Peoples R China
3.Univ Sci & Technol Beijing, Sch Mat Sci & Engn, Beijing 100083, Peoples R China
4.Chinese Acad Sci, Beijing Key Lab Ion Liquids Clean Proc, Inst Proc Engn, Beijing 100190, Peoples R China
5.Tsinghua Univ, Dept Engn Mech, Appl Mech Lab, Beijing 100084, Peoples R China
6.Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China
推荐引用方式
GB/T 7714		 Wang, Huaping,Xue, Xudong,Jiang, Qianqing,et al. Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2019,141(28):11004-11008.
APA Wang, Huaping.,Xue, Xudong.,Jiang, Qianqing.,Wang, Yanlei.,Geng, Dechao.,...&Yu, Gui.(2019).Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,141(28),11004-11008.
MLA Wang, Huaping,et al."Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 141.28(2019):11004-11008.

入库方式： OAI收割

来源：过程工程研究所

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。