Design of X-band low-noise amplifier for optimum matching between noise and power
文献类型：会议论文
| 作者 | Wang, Xiao-Mei1,2 ; Sun, Zhengwen1,2; Chen, Yong1; Wang, Sixiu1,2
|
| 出版日期 | 2010-07-29 |
| 会议日期 | June 22, 2010 - June 24, 2010 |
| 会议地点 | Shanghai, China |
| 关键词 | High electron mobility transistors Design Electron mobility Low noise amplifiers |
| 卷号 | 5 |
| DOI | 10.1109/ICETC.2010.5529786 |
| 页码 | 184-188 |
| 国家 | China |
| 英文摘要 | High Electron Mobility Transistors (HEMT) plays a crucial role in microwave low noise receivers. Low noise HEMTs are used extensively in the ultra low noise amplifier (LNAs). Design the LNA is difficult for the radio astronomical observations, especially the realization of the simultaneous about the noise matching and the power matching, as well as the full band unconditional stability. With the Agilent Advanced Design System (ADS) simulation tools, the X-band three-stage LNA using NEC-NE3210S01 HEMTs has been designed: Noise Figure<0.6d8; power Gain>30d8 at X-band (7.89.4GHz), full band unconditional stability. 2010 IEEE. |
| 源文献作者 | Int. Assoc. Comput. Sci. Inf. Technol. (IACSIT) |
| 产权排序 | 1 |
| 会议录 | 2010 2nd International Conference on Education Technology and Computer, ICETC 2010
 |
| 会议录出版者 | IEEE Computer Society |
| 语种 | 英语 |
| URL标识 | 查看原文 |
| ISBN号 | 9781424463688 |
| 源URL | [http://ir.xao.ac.cn/handle/45760611-7/3141]  |
| 专题 | 微波接收机技术实验室 |
| 通讯作者 | Wang, Xiao-Mei |
| 作者单位 | 1.Urumqi Observatory, National Astronomical Observatories, Chinese Academy of Sciences, Urumqi,China,830011; 2.Graduate school, Chinese Academy of Sciences |
| 推荐引用方式 GB/T 7714 | Wang, Xiao-Mei,Sun, Zhengwen,Chen, Yong,et al. Design of X-band low-noise amplifier for optimum matching between noise and power[C]. 见:. Shanghai, China. June 22, 2010 - June 24, 2010. |
入库方式： OAI收割
来源：新疆天文台
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