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A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells

文献类型：期刊论文

作者Mao, Yuliang3; Xu, Congsheng3; Yuan, Jianmei2; Zhao, Hongquan1
刊名JOURNAL OF MATERIALS CHEMISTRY A
出版日期2019-05-14
卷号7期号:18页码:11265-11271
ISSN号2050-7488
DOI10.1039/c9ta01219b
通讯作者Mao, Yuliang(ylmao@xtu.edu.cn)
英文摘要Based on the first-principles calculations, we demonstrated that a GeSe/SnSe heterostructure has type-II band alignment and a direct band gap, which can effectively prevent the recombination of photogenerated electron-hole pairs. Moreover, the GeSe/SnSe heterostructure also exhibits strong optical absorption intensity, which can reach the order of 10(5) cm(-1). Our predicted photoelectric conversion efficiency (PCE) for the GeSe/SnSe heterostructure reaches 21.47%. We also found that the hole carrier mobility of the GeSe/SnSe heterostructure along the x direction has been significantly improved to 6.42 x 10(4) cm(2) V-1 s(-1), which is higher than that of black phosphorus (1 x 10(4) cm(2) V-1 s(-1)). By applying a vertical external electric field, we found that the band gap and band offset of the GeSe/SnSe heterojunction can be effectively tuned. The revealed type-II band alignment, strong optical absorption, superior PCE and superior hole carrier mobility of the GeSe/SnSe heterostructure imply that this new proposed material has broad application prospects in solar cells.
资助项目National Natural Science Foundation of China[11471280] ; National Natural Science Foundation of China[11374251] ; National Natural Science Foundation of China[61775214] ; Research Foundation of Education Bureau of Hunan Province, China[17A207] ; Natural Science Foundation of Hunan Province, China[2019JJ40280] ; Program for Changjiang Scholars and Innovative Research Team in University[IRT13093]
WOS研究方向Chemistry ; Energy & Fuels ; Materials Science
语种英语
WOS记录号WOS:000472225200043
出版者ROYAL SOC CHEMISTRY
源URL[http://119.78.100.138/handle/2HOD01W0/8209]  
专题量子信息技术研究中心
通讯作者Mao, Yuliang
作者单位1.Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 401120, Peoples R China
2.Xiangtan Univ, Sch Math & Computat Sci, Hunan Key Lab Computat & Simulat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China
3.Xiangtan Univ, Sch Phys & Optoelect, Hunan Key Lab Micronano Energy Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
推荐引用方式
GB/T 7714		 Mao, Yuliang,Xu, Congsheng,Yuan, Jianmei,et al. A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells[J]. JOURNAL OF MATERIALS CHEMISTRY A,2019,7(18):11265-11271.
APA Mao, Yuliang,Xu, Congsheng,Yuan, Jianmei,&Zhao, Hongquan.(2019).A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells.JOURNAL OF MATERIALS CHEMISTRY A,7(18),11265-11271.
MLA Mao, Yuliang,et al."A two-dimensional GeSe/SnSe heterostructure for high performance thin-film solar cells".JOURNAL OF MATERIALS CHEMISTRY A 7.18(2019):11265-11271.

入库方式： OAI收割

来源：重庆绿色智能技术研究院

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