effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic
文献类型:期刊论文
作者 | Dai Chongchong2; Liu Xuechao2; Zhou Tianyu2; Zhuo Shiyi2; Shi Biao1![]() |
刊名 | chinesephysicsb
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出版日期 | 2014 |
卷号 | 23期号:6 |
ISSN号 | 1674-1056 |
英文摘要 | The 3C-SiC thin films used herein are grown on Si substrates by chemical vapor deposition. Al contacts with different thickness values are deposited on the 3C-SiC/Si (100) structure by the magnetron sputtering method and are annealed at different temperatures. We focus on the effects of the annealing temperature on the ohmic contact properties and microstructure of Al/3C-SiC structure. The electrical properties of Al contacts to n-type 3C-SiC are characterized by the transmission line method. The crystal structures and chemical phases of Al contacts are examined by X-ray diffraction, Raman spectra, and transmission electron microscopy, respectively. It is found that the Al contacts exhibit ohmic contact behaviors when the annealing temperature is below 550 degrees C, and they become Schottky contacts when the annealing temperature is above 650 degrees C. A minimum specific contact resistance of 1.8 x 10(-4) Omega.cm(2) is obtained when the Al contact is annealed at 250 degrees C. |
资助项目 | [Shanghai Rising-Star Program, China] ; [Young Scientists Fund of the National Natural Science Foundation of China] ; [Innovation Program of the Chinese Academy of Sciences] ; [Industry-Academic Joint Technological Innovations Fund Project of Jiangsu Province, China] ; [National High Technology Research and Development Program of China] |
语种 | 英语 |
源URL | [http://119.78.100.138/handle/2HOD01W0/9419] ![]() |
专题 | 中国科学院重庆绿色智能技术研究院 |
作者单位 | 1.中国科学院重庆绿色智能技术研究院 2.中国科学院上海硅酸盐研究所 |
推荐引用方式 GB/T 7714 | Dai Chongchong,Liu Xuechao,Zhou Tianyu,et al. effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic[J]. chinesephysicsb,2014,23(6). |
APA | Dai Chongchong,Liu Xuechao,Zhou Tianyu,Zhuo Shiyi,Shi Biao,&Shi Erwei.(2014).effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic.chinesephysicsb,23(6). |
MLA | Dai Chongchong,et al."effectsofannealingtemperatureontheelectricalpropertyandmicrostructureofaluminumcontactonntype3csic".chinesephysicsb 23.6(2014). |
入库方式: OAI收割
来源:重庆绿色智能技术研究院
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