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Molecular dynamics simulation of helium ion implantation into silicon and its migration

文献类型：期刊论文

作者Liu L; Xu ZW; Li RR; Zhu R; Xu J; Zhao JL; Wang C(王超); Nordlund K; Fu X; Fang FZ
刊名NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
出版日期2019-10-01
卷号456页码:53-59
关键词Molecular dynamics simulation Ion implantation Helium Si Annealing
ISSN号0168-583X
DOI10.1016/j.nimb.2019.06.034
通讯作者Xu, Zongwei(zongweixu@tju.edu.cn) ; Xu, Jun(xujun@pku.edu.cn)
英文摘要In this paper, a model of helium ion implanted monocrystalline Si was constructed by using molecular dynamics (MD) simulation method to study the interaction mechanism of helium ion with monocrystalline Si and helium ion migration. In order to study the damage effect of helium ion implantation on monocrystalline Si, identify diamond structure (IDS), radial distribution function, temperature analysis were calculated and analyzed. The effects of ion doses, beam currents and energies on the damage were studied. Helium ion implanted Si with ion doses of 1 x 10(14)/cm(2) was subsequently heated to 300 K. MD simulation results indicated that IDS damage induced by ion implantation was positively correlated with ion doses as the ion implantation increased to 1 x 10(14)/cm(2). The mean-square displacement of helium atoms was calculated during the temperature rising to 300 K. It was found that the high permeability of helium atoms in Si and the acceleration of atomic thermal motion owing to elevated temperature as well as the existence of larger stress would be helpful to the migration of implant helium atoms.
分类号Q3
WOS关键词BUBBLE FORMATION ; HE-IMPLANTATION ; CAVITIES ; TEMPERATURE ; MECHANISMS ; EVOLUTION ; DEFECTS ; VOIDS
资助项目National Natural Science Foundation of China[51575389] ; National Natural Science Foundation of China[51511130074] ; National Natural Science Foundation of China[11327902] ; National Natural Science Foundation of China[11605001] ; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme[51761135106] ; Natural Science Foundation of Tianjin[15JCYBJC19400] ; State key laboratory of precision measuring technology and instruments[Pi1t1705] ; '111' project by the State Administration of Foreign Experts Affairs ; Ministry of Education of China[B07014]
WOS研究方向Instruments & Instrumentation ; Nuclear Science & Technology ; Physics
语种英语
WOS记录号WOS:000480669600011
资助机构National Natural Science Foundation of China ; National Natural Science Foundation of China (NSFC) - German Research Foundation (DFG) International Joint Research Programme ; Natural Science Foundation of Tianjin ; State key laboratory of precision measuring technology and instruments ; '111' project by the State Administration of Foreign Experts Affairs ; Ministry of Education of China
其他责任者Xu, Zongwei ; Xu, Jun
源URL[http://dspace.imech.ac.cn/handle/311007/79745]  
专题力学研究所_非线性力学国家重点实验室
推荐引用方式
GB/T 7714		 Liu L,Xu ZW,Li RR,et al. Molecular dynamics simulation of helium ion implantation into silicon and its migration[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2019,456:53-59.
APA Liu L.,Xu ZW.,Li RR.,Zhu R.,Xu J.,...&Fang FZ.(2019).Molecular dynamics simulation of helium ion implantation into silicon and its migration.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,456,53-59.
MLA Liu L,et al."Molecular dynamics simulation of helium ion implantation into silicon and its migration".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 456(2019):53-59.

入库方式： OAI收割

来源：力学研究所

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