中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
首页 机构 成果 学者
  
  1. CAS IR Grid
  2. 合肥物质科学研究院
  3. 中国科学院合肥物质科学研究院
  4. 中科院等离子体物理研究所
Photo-enhanced gas sensing of SnS2 with nanoscale defects

文献类型：期刊论文

作者Yan, Wen-Jie2; Chen, Deng-Yun2; Fuh, Huei-Ru3,4; Li, Ying-Lan2; Zhang, Duan2; Liu, Huajun5; Wu, Gang2; Zhang, Lei1; Ren, Xiangkui1; Cho, Jiung6
刊名RSC ADVANCES
出版日期2019
卷号9期号:2页码:626-635
ISSN号2046-2069
DOI10.1039/c8ra08857h
通讯作者Fuh, Huei-Ru(hrfuh@saturn.yzu.edu.tw) ; Chang, Ching-Ray(crchang@phys.ntu.edu.tw) ; Wu, Han-Chun(wuhc@bit.edu.cn)
英文摘要Recently a SnS2 based NO2 gas sensor with a 30 ppb detection limit was demonstrated but this required high operation temperatures. Concurrently, SnS2 grown by chemical vapor deposition is known to naturally contain nanoscale defects, which could be exploited. Here, we significantly enhance the performance of a NO2 gas sensor based on SnS2 with nanoscale defects by photon illumination, and a detection limit of 2.5 ppb is achieved at room temperature. Using a classical Langmuir model and density functional theory simulations, we show S vacancies work as additional adsorption sites with fast adsorption times, higher adsorption energies, and an order of magnitude higher resistance change compared with pristine SnS2. More interestingly, when electron-hole pairs are excited by photon illumination, the average adsorption time first increases and then decreases with NO2 concentration, while the average desorption time always decreases with NO2 concentration. Our results give a deep understanding of photo-enhanced gas sensing of SnS2 with nanoscale defects, and thus open an interesting window for the design of high performance gas sensing devices based on 2D materials.
WOS关键词CHEMICAL-VAPOR-DEPOSITION ; 2-DIMENSIONAL SNS2 ; NO2 ; SENSORS ; GROWTH ; OXIDE ; NANOSTRUCTURES ; ADSORPTION ; MOLECULES ; CRYSTALS
资助项目National Key R&D Program of China[2017YFE0301404] ; National Key R&D Program of China[2017YFA0303800] ; National Natural Science Foundation of China[61874010] ; National Natural Science Foundation of China[11804237] ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology[2017CX01006]
WOS研究方向Chemistry
语种英语
WOS记录号WOS:000455494200006
出版者ROYAL SOC CHEMISTRY
资助机构National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Key R&D Program of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology ; Science and Technology Innovation Program for Creative Talents in Beijing Institute of Technology
源URL[http://ir.hfcas.ac.cn:8080/handle/334002/41349]  
专题合肥物质科学研究院_中科院等离子体物理研究所
通讯作者Fuh, Huei-Ru; Chang, Ching-Ray; Wu, Han-Chun
作者单位1.Tianjin Univ, Sch Chem Engn & Technol, Tianjin 300072, Peoples R China
2.Beijing Inst Technol, Sch Phys, Beijing 100081, Peoples R China
3.Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan
4.Yuan Ze Univ, Dept Chem Engn & Mat Sci, Taoyuan 320, Taiwan
5.Chinese Acad Sci, Inst Plasma Phys, Hefei 230031, Anhui, Peoples R China
6.Korea Basic Sci Inst, Western Seoul Ctr, Seoul 03579, South Korea
7.Korea Basic Sci Inst, Chuncheon Ctr, Chunchon 24341, South Korea
8.Korea Res Inst Stand & Sci, Div Ind Metrol, Daejeon 305340, South Korea
推荐引用方式
GB/T 7714		 Yan, Wen-Jie,Chen, Deng-Yun,Fuh, Huei-Ru,et al. Photo-enhanced gas sensing of SnS2 with nanoscale defects[J]. RSC ADVANCES,2019,9(2):626-635.
APA Yan, Wen-Jie.,Chen, Deng-Yun.,Fuh, Huei-Ru.,Li, Ying-Lan.,Zhang, Duan.,...&Wu, Han-Chun.(2019).Photo-enhanced gas sensing of SnS2 with nanoscale defects.RSC ADVANCES,9(2),626-635.
MLA Yan, Wen-Jie,et al."Photo-enhanced gas sensing of SnS2 with nanoscale defects".RSC ADVANCES 9.2(2019):626-635.

入库方式： OAI收割

来源：合肥物质科学研究院

浏览0
下载0
收藏0
其他版本

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。