Semiconductor laser and manufacture of the same
文献类型：专利
| 作者 | ASAGA TATSUYA |
| 发表日期 | 1989-06-20 |
| 专利号 | JP1989157587A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture of the same |
| 英文摘要 | PURPOSE:To manufacture a semiconductor laser in a simplified manner with good reproducibility by greatly reducing the number of processes by providing a semiconductor active layer and a semiconductor burried layer, both layers being formed of a compound semiconductor layer including phosphorus and at least one group V element, the compound semiconductor layer being caused to grow by an organic metal chemical vapor phase growth process, and the semiconductor burried layer being formed by irradiating a burried layer with ultraviolet rays during the growth of the semiconductor active layer. CONSTITUTION:There are caused to grow and laminated successively on an n type InP substrate 102, an n type InP cladding layer, e.g., an In0.76Ga0.24As0.55 P0.45 active layer 109, a p type InP cladding layer 105, and a p type InGaAsP contact layer 106 by an organic metal chemical vapor phase(CVP) growth process. Upon formation of the active layer 109, a burried region excepting an oscillation region is irradiated with ultraviolet rays to promote the decomposition of PH3, a group V raw material in the organic metal CVP process. Thus, an In0.76Ga0.24As0.35P0.65 burried layer which is rich in P is formed. |
| 公开日期 | 1989-06-20 |
| 申请日期 | 1987-12-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83124]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | ASAGA TATSUYA. Semiconductor laser and manufacture of the same. JP1989157587A. 1989-06-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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