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文献类型：专利
| 作者 | ASATA SUSUMU |
| 发表日期 | 1993-09-09 |
| 专利号 | JP1993063105B2 |
| 著作权人 | NIPPON ELECTRIC CO |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | - |
| 英文摘要 | PURPOSE:To facilitate the OFF operation of an element by disposing an n-type optical absorption layer having small forbidden band width and small concentration and an n-type emitter layer having small forbidden band width and large concentration in succession on the side reverse to the light-emitting layer side of an n-type clad layer holding a light-emitting layer together with a p-type clad layer and constituting double-hetero structure. CONSTITUTION:When bias voltage is applied so that the p-type clad layer 15 side is brought to positive charges to an n-type emitter layer 11, electrons are stored on the layer 11 side of the interface and electrons are depleted on the layer 12 side and an OFF state is kept because the forbidden band width of the layer 11 is made smaller than that of an optical absorption layer 12. When input beams 18 are projected to the layer 12, a large number of electrons flow into the layer 12 from the layer 11, an element transfers to an ON state, and output beams 19 are controlled. When an optical input is stopped, voltage pulses are applied so that a set voltage value is lowered temporarily to a value sufficiently lower than an element current threshold-voltage value because there is no p-n double structure, thus easily allowing the switching OFF of the element. |
| 公开日期 | 1993-09-09 |
| 申请日期 | 1987-07-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83138]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON ELECTRIC CO |
| 推荐引用方式 GB/T 7714 | ASATA SUSUMU. -. JP1993063105B2. 1993-09-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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