Manufacture of semiconductor laser
文献类型：专利
| 作者 | MIZUOCHI HITOSHI |
| 发表日期 | 1992-05-15 |
| 专利号 | JP1992142091A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To efficiently inject a current in an active layer and to obtain an excellent result in laser characteristics by partly diffusing the same conductivity type dopant as a first conductivity type in a direction of a waveguide near an active region. CONSTITUTION:A buried layer 4, a current blocking layer 4, and current blocking layer 5 are grown by an LPE until a mesa is flatly buried in a second epitaxial growth. Then, both sides of a stripe partly remain in a stripe state, the other is covered with an SiN film 11, etc., and partly diffused in a p-type by a vacuum sealing method. The layers 4, 5 are completely separated, the film 11, etc., is removed, and a first clad layer 6, a contact layer 7 are crystalline grown. Thus, the same conductivity type dopant as a first conductivity type is partly diffused in the direction of a waveguide near an active region to perform a high yield in the manufacture of a semiconductor laser to obtain the laser having a stable threshold value, an operating current. |
| 公开日期 | 1992-05-15 |
| 申请日期 | 1990-10-02 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83140]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | MIZUOCHI HITOSHI. Manufacture of semiconductor laser. JP1992142091A. 1992-05-15. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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