Semiconductor light-emitting element
文献类型：专利
| 作者 | NISHI KENICHI; KIMURA TORU |
| 发表日期 | 1988-01-25 |
| 专利号 | JP1988017571A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting element |
| 英文摘要 | PURPOSE:To enable the switching operation at low voltage and the high speed modulation to be performed by a method wherein a light-emitting part is composed of a first and a second ultra-thin multiple semiconductor film in thickness of electrons not exceeding around mean free processing level alternately laminated in mumtiple layers. CONSTITUTION:A field generating electrode 107 is formed of a light emitting part 105 formed of an undoped Al0.6Ga0.4As clad layer 102, an undoped Al0.2Ga0.8 As quantum well layer 103 and an undoped Al0.6Ga0.4As barrier layer 104 alternately laminated in eight layers on a Cr doped semi-insulating GaAs substrate 101 by a molecular beam epitaxial process and an undoped Al0.6Ga0.4As clad layer 106 successively grown and evaporated. Later, a striped mesa part is formed with both sides thereof filled with an Si-doped N type Al0.6Ga0.4As 108 and a Be-doped P type Al0.6Ga0.4As 109. Finally, another current generating electrode 110 is formed by evaporation turning into a chip by cleavage while a cleavage surface in one side optical axis direction is coated with a anti- reflection coating film 11 |
| 公开日期 | 1988-01-25 |
| 申请日期 | 1986-07-10 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83149]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | NISHI KENICHI,KIMURA TORU. Semiconductor light-emitting element. JP1988017571A. 1988-01-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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