Semiconductor laser device
文献类型：专利
| 作者 | KUME MASAHIRO; YOSHIKAWA AKIO; ITOU KUNIO; SHIMIZU YUUICHI; SUGINO TAKASHI |
| 发表日期 | 1985-12-26 |
| 专利号 | JP1985263489A |
| 著作权人 | MATSUSHITA DENKI SANGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a device which is able to keep both of return light induced noises and astigmatic differences practically permissible level, by a method wherein a double hetero structure is made on a base plate having a specified step, and a wave guide structure in the lateral direction is made to have the character of the gain wave guide type besides the perfect refractive index wave guide type, and the wave guide structure is made intermediate of the two structures. CONSTITUTION:A step of the height of 9+ or -0.2mum is formed on an n type (100) GaAs base plate in the direction, and a double-hetero structure is formed on the base plate having this step by the liquid phase epitaxial growth. In this case, a Ga1-xAlxAs active layer 10 (x-0.07) which is inserted between an n type Ga1-yAlyAs clad layer 9 and a p type Ga1-yAly As clad layer (y-0.35), is bent at the step part of the base plate, and since the liquid phase grow speed at the step part is a little faster than that of the flat part, the film width becomes larger than that of the flat part. Accordingly, the active layer obtains the effective refractive index difference at the step part in the lateral direction, and the wave guide structure becomes the refractive index wave guide type. Hereby, the gain wave guide character can be added to the wave guide structure, and an intermediate condition of the wave guide structure is realized by refractive index and gain, and the returnlight induced noises are few than that of the pure refractive index wave guide type, and the astigmatic difference can be made small than that of the pure gain wave guide type. |
| 公开日期 | 1985-12-26 |
| 申请日期 | 1984-06-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83150]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA DENKI SANGYO KK |
| 推荐引用方式 GB/T 7714 | KUME MASAHIRO,YOSHIKAWA AKIO,ITOU KUNIO,et al. Semiconductor laser device. JP1985263489A. 1985-12-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。