Semiconductor laser element
文献类型：专利
| 作者 | SUYAMA NAOHIRO; SASAKI KAZUAKI; KONDO MASAFUMI; HOSODA MASAHIRO; TAKAHASHI KOUSEI; HAYAKAWA TOSHIRO |
| 发表日期 | 1990-07-11 |
| 专利号 | JP1990178985A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To effectively generate a self-excited oscillation and to obtain a low threshold current by specifying the width of a current injection path, a distance between the current injection path and an active layer, and an equivalent refractive index difference between a region near the current injection path and a region adjacent to the region. CONSTITUTION:The width W1 of a current injection path 12 is 0.5-4mum, a distance between the current injection path 12 and an active layer 5 is 0.2-0.8mum, and an equivalent refractive index difference between a region near the current injection path 12 and a region adjacent to the region is 1X10-5X10. The thickness (d) of an optical guide layer 6 and a clad layer 7 is desirably smaller to reduce the width W1 of the current injection path 12 but larger to increase the expansion of a light distribution, and the optimum thickness (d) is 0.2-0.8mum. If the equivalent refractive index difference DELTAn is 1X10-5X10, it becomes a self-excited oscillation. The desirable value of the W1 is 0.5-4mum. Thus, the self-excited oscillation can be effectively generated, and a low threshold current is obtained. |
| 公开日期 | 1990-07-11 |
| 申请日期 | 1988-12-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83153]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | SUYAMA NAOHIRO,SASAKI KAZUAKI,KONDO MASAFUMI,et al. Semiconductor laser element. JP1990178985A. 1990-07-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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