A semiconductor laser device
文献类型：专利
| 作者 | KAN, YASUO; TAKAHASHI, KOSEI; HOSODA, MASAHIRO; TSUNODA, ATSUO; TANI, KENTARO; WATANABE, MASANORI |
| 发表日期 | 1996-02-28 |
| 专利号 | EP0549103B1 |
| 著作权人 | SHARP KABUSHIKI KAISHA |
| 国家 | 欧洲专利局 |
| 文献子类 | 授权发明 |
| 其他题名 | A semiconductor laser device |
| 英文摘要 | A semiconductor laser device includes a substrate (11); a double hetero structure having an n-type cladding layer (13), an active layer (15), and a p-type cladding layer (18), which is formed on an upper face of the substrate; and electrodes (111,112) formed on a lower face of the substrate and on an upper face of the double hetero structure, wherein the double hetero structure further includes a p-type hetero-barrier layer (16) formed between the p-type cladding layer and the active layer, which is strained by compression due to a lattice mismatch. |
| 公开日期 | 1996-02-28 |
| 申请日期 | 1992-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83160]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP KABUSHIKI KAISHA |
| 推荐引用方式 GB/T 7714 | KAN, YASUO,TAKAHASHI, KOSEI,HOSODA, MASAHIRO,et al. A semiconductor laser device. EP0549103B1. 1996-02-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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