Semiconductor laser element
文献类型：专利
| 作者 | IRIKAWA MASANORI; KASHIWA SUSUMU |
| 发表日期 | 1988-05-13 |
| 专利号 | JP1988108791A |
| 著作权人 | 古河電気工業株式会社 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser element |
| 英文摘要 | PURPOSE:To obstruct the generation of an oxide on the interface of a buried clad layer and a second clad layer, and to improve element characteristics and reliability by forming both clad layers in a GaxIn1-xP layer. CONSTITUTION:An active layer 3 is shaped onto a GaAs substrate 1 through a first clad layer 21 consisting of a GaxIn1-xP layer. A buried clad layer 22 composed of a second conductivity type GaxIn1-xP layer is formed onto the active layer 3. An optical absorption layer 5 to which a predetermined pattern is shaped is formed onto the layer 22, and a second clad layer 23 is shaped to the absorption layer 5. A P side electrode 9a is formed through a cap layer 7 and an insulating film 8. The layer 22 and the second clad layer 23 are constituted of the GaxIn1-xP layer, the generation of an oxide on the interface of both clad layers is hindered, and the second clad layer 23 is grown integrally on the layer 22 under an excellent crystal, thus improving the characteristics and reliability of a semiconductor laser element 30. |
| 公开日期 | 1988-05-13 |
| 申请日期 | 1986-10-27 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83161]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 古河電気工業株式会社 |
| 推荐引用方式 GB/T 7714 | IRIKAWA MASANORI,KASHIWA SUSUMU. Semiconductor laser element. JP1988108791A. 1988-05-13. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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