Semiconductor laser device
文献类型：专利
| 作者 | OKAI MAKOTO; KAYANE NAOKI; SAKANO SHINJI |
| 发表日期 | 1991-04-11 |
| 专利号 | JP1991087087A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a wide range for changing wavelength by a method wherein, in a distributed feedback type laser having a region in which refractive index is perturbed in the vicinity of an active region along the axial direction of a laser resonator, the magnitude of perturbation in the vicinity of one end or both ends of the resonator is made small as compared with the perturbation of the other parts. CONSTITUTION:A diffraction grating 2 which has a period of 240nm and a quarter wavelength shift structure in the vicinity of the central part is partly formed on the surface of an N-type InP substrate By low pressure vapor growth method, the following are laminated and grown on the grating: an N- type InGaAsP guide layer 3, an InGaAs/InGaAsP multi-quantum well active layer 4 and a P-type InP clad layer 5. An N electrode 6 and P electrodes 71-73 are vapor-deposited, and an antireflection film 10 is formed by sputtering. Thereby a laser device is made to oscillate with a stable longitudinal single mode. The wavelength width is changed to be, e.g. 5.0nm by adjusting currents applied to the electrodes 71-73. FM modulation characteristics which are flat in the range of 1kHz-100GHz are obtained by modulating the current applied to the electrode 72 or 73. |
| 公开日期 | 1991-04-11 |
| 申请日期 | 1990-06-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83165]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | OKAI MAKOTO,KAYANE NAOKI,SAKANO SHINJI. Semiconductor laser device. JP1991087087A. 1991-04-11. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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