Semiconductor laser device
文献类型：专利
| 作者 | OKAJIMA MASASUE; MUTOU YUUHEI; SHIMADA NAOHIRO; MOGI NAOTO |
| 发表日期 | 1985-01-09 |
| 专利号 | JP1985003173A |
| 著作权人 | TOSHIBA KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a laser combining a longitudinal multimode oscillation and a small antigmatism by making the width of an electrode smaller than the width of a striped projecting section when a first clad layer consisting of the same III-IV group semiconductor as a substrate, an active layer, an optical waveguide layer and a second clad layer are laminated on the III-IV group semiconductor substrate and the striped projecting section is formed to the optical waveguide layer and a striped electrode to the second clad layer. CONSTITUTION:An N type Al0.45Ga0.55As first clad layer 12, an un-doped Al0.15 Ga0.85As active layer 13 and a P type Al0.35Ga0.65As optical waveguide layer 14 are laminated on an N type GaAs substrate 11 and grown in a liquid phase in an epitaxial manner, and a striped projecting section directed toward the direction is formed to the central section of the surface of the layer 14 through selective etching. A P type Al0.45Ga0.55As second clad layer 15 is deposited on the whole surface and coated with an anodic oxidation film 18, a window is bored made correspond to the projecting section, a P type GaAs ohmic contact layer 16 is formed and an Zn diffusion layer 17 is shaped only to a surface layer section. In the constitution, the width of the layer 16 is set to a value smaller than the width of the projecting section of the surface of the layer 14. |
| 公开日期 | 1985-01-09 |
| 申请日期 | 1983-06-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83168]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOSHIBA KK |
| 推荐引用方式 GB/T 7714 | OKAJIMA MASASUE,MUTOU YUUHEI,SHIMADA NAOHIRO,et al. Semiconductor laser device. JP1985003173A. 1985-01-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。