Semiconductor laser device
文献类型：专利
| 作者 | OOSAKA SHIGEO; HANAMITSU KIYOSHI; SHIMA KATSUTO; SEKI KATSUJI |
| 发表日期 | 1983-04-04 |
| 专利号 | JP1983056376A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To stabilize a lateral mode, and to obtain high output by forming a guide mechanism effectively using the change of a refractive index by a P type diffusion layer and the change of a refractive index by carriers being injected. CONSTITUTION:An active layer 9, which consists of a GaAlAs semiconductor layer, etc. and generates laser oscillation, and clad layers 8, 10, which have forbidden band width larger than the active layer 9 and hold the active layer 9, are formed onto a substrate 7. The P type diffusion layer 13 is shaped through the diffusion of Zn, etc., and a P pushed-in layer 14 is formed through heat treatment. The P type diffusion layer 13 takes striped form, and the section is W-shaped form. Consequently, impurity concentration is made higher than the center at both ends of a striped region, and the refractive indices becomes smaller than the center. Refractive indices at both ends of the striped region are further lowered through the injection of currents from a P-N junction section 17 under the state of operation. Accordingly, the laser device, the guide mechanism thereof is effective and which has striped type double-hetero structure, is obtained. |
| 公开日期 | 1983-04-04 |
| 申请日期 | 1981-09-29 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83169]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | OOSAKA SHIGEO,HANAMITSU KIYOSHI,SHIMA KATSUTO,et al. Semiconductor laser device. JP1983056376A. 1983-04-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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