Semiconductor laser
文献类型：专利
| 作者 | HIRAYAMA YUZO; SUZUKI NOBUO |
| 发表日期 | 1992-10-09 |
| 专利号 | JP1992284683A |
| 著作权人 | 株式会社東芝 |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser, whose limit band is improved and which is capable of making a superhigh-speed response, by a method wherein the laser is provided with an optical waveguide comprising an active region of a strain quantum well structure formed by laminating compound semiconductor layers, respective specified modulation means, resonator and a means for increasing a full optical loss at the time of a laser oscillation. CONSTITUTION:A semiconductor laser is provide with an optical waveguide comprising an active region of a strain quantum well structure formed by laminating compound semiconductor layers 12 to 15, a resonator, which generates light by injecting a current in the above active region, is formed of one pair of end faces of the semiconductor layer and feeds back the above light to make a laser oscillation take place, and a means to increase a full optical loss at the time of the laser oscillation. For example, a strain quantum well structure consisting of four layers of In0.7Ga0.3As well layers 13 applied 16% of a compressive strain and InGaAsP barrier layers 14 which are each composed in a thickness of 13mum, an InGaAsP optical waveguide layer 15, which is doped with Zn at a dose of 2.2X10cm and is composed in a thickness of 15mum, a P-type InP clad layer 16, an InGaAs contact layer 17 and the like are provided on an N-type InP substrate 11 via an InGaAsP optical waveguide layer 12. |
| 公开日期 | 1992-10-09 |
| 申请日期 | 1991-03-14 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83174]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 株式会社東芝 |
| 推荐引用方式 GB/T 7714 | HIRAYAMA YUZO,SUZUKI NOBUO. Semiconductor laser. JP1992284683A. 1992-10-09. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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