Single-wavelength semiconductor laser
文献类型：专利
| 作者 | NAKAJIMA YASUO; TAKEMOTO AKIRA |
| 发表日期 | 1990-08-24 |
| 专利号 | JP1990213188A |
| 著作权人 | MITSUBISHI ELECTRIC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Single-wavelength semiconductor laser |
| 英文摘要 | PURPOSE:To enable execution of oscillation in a uniaxial mode with a low threshold value and even at the time of high injection by constructing an optical waveguide of an active layer formed of a bulk crystal, an optical guide layer and an MQW layer, by diffusing an impurity in a part of the MQW layer and by disordering thereby the diffused region thereof. CONSTITUTION:After an n-InP buffer layer 2 is made to grow epitaxially on an n-InP substrate 1, a diffraction grating is formed on n-InP. Next, an n- InGaAsP optical guide layer 4, an InGaAs active layer 5, an InGaAsP optical guide layer 6, an MQW(Multiple Quantum Well) layer 7, a p-InP clad layer and a p-InGaAsP contact layer 9 are made to grow epitaxially sequentially. Next, a part of the MQW layer is disordered by diffusing Zn, for instance. Then, a stripe width being left for conducting a transverse mode control, the other part is etched to form a buried electrode 10 of p-InP and n-InP current block layers in a waveguide. Lastly, an SiN non-reflective film 11 is applied for suppressing the effect of a phase of an end face. Since a phase control region is formed by diffusion in this way, the length of the region is easy to control. |
| 公开日期 | 1990-08-24 |
| 申请日期 | 1989-02-13 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83187]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORP |
| 推荐引用方式 GB/T 7714 | NAKAJIMA YASUO,TAKEMOTO AKIRA. Single-wavelength semiconductor laser. JP1990213188A. 1990-08-24. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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