Semiconductor laser
文献类型：专利
| 作者 | TSUNEKAWA YOSHIFUMI; OSHIMA HIROYUKI; IWANO HIDEAKI; KOMATSU HIROSHI |
| 发表日期 | 1986-07-07 |
| 专利号 | JP1986148893A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To implement a current having a low threshold value, by providing a region, in which an injected current is narrowed, in an active layer, and providing a non-absorbing region of laser light at the end surface of the active layer. CONSTITUTION:On a P-type GaAs substrate 1, a P-type AlGaAs clad layer 2, a P-type AlGaAs light guide layer 3, a multiple quantum well (MQW) layer 4 and an N-type AlGaAs clad layer 5 are continuously grown. After the forma tion of a silicon nitride layer, a mask for selective diffusion of Zn is formed and terminal diffusion of Zn is performed. After the silicon nitride mask is removed, an N-type GaAs cap layer 7 is formed. An Si oxide layer 6 is formed. The MQW part is made irregular, and a GaAlAs layer including Zn is formed. At the laser-light emitting end surface of the irregular region, a non-absorbing region of the laser light is formed. The irregular region on the side surface contributes to the current narrowing, and a current region is limited. Thus the current narrowing region and the non-absorbing region of the laser light at the end surface of the active layer can be simultaneously formed, and the current having the low threshold value can be implemented. |
| 公开日期 | 1986-07-07 |
| 申请日期 | 1984-12-22 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83189]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | TSUNEKAWA YOSHIFUMI,OSHIMA HIROYUKI,IWANO HIDEAKI,et al. Semiconductor laser. JP1986148893A. 1986-07-07. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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