半導体レーザおよびその製造方法
文献类型：专利
| 作者 | 武本 彰; 渡辺 斉; 藤原 正敏; 柿本 昇一 |
| 发表日期 | 1996-01-29 |
| 专利号 | JP1996008394B2 |
| 著作权人 | 三菱電機株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザおよびその製造方法 |
| 英文摘要 | PURPOSE:To obtain a gain coupling type semiconductor laser which oscillates stably in a simple mode by providing a refractive index conforming layer which has inhibited band width larger than an active layer and whose refractive index is higher than a clad layer and which is so arranged as to remove the periodicity of the refractive index. CONSTITUTION:For an active layer 3 and an absorbing layer 5, the refractive indexes are higher than clad layers 2 and 7, so in case that only the thickness of the absorbing layer 5 is changed, the equivalent refractive indexes vary between the place where the absorbing layer 5 is thick and the place where it is thin. Accordingly, the periodicity of the refractive index arises. To compensate for this, a refractive index conforming layer 8, whose refractive index is higher than the clad layers 2 and 7, is provided. This is an n-type of In0.72Ga0.28 As0.6P0.4 layer. If the refractive index and the thickness of the refractive index conforming layer 8 are set so that the equivalent refractive index at the position of a region A-A', where the refractive index conforming layer 8 is provided, may be equal to that at the position of region B-B', where the absorbing layer 5 exists, the periodicity of refractive index can be removed. |
| 公开日期 | 1996-01-29 |
| 申请日期 | 1989-06-30 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83190]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 三菱電機株式会社 |
| 推荐引用方式 GB/T 7714 | 武本 彰,渡辺 斉,藤原 正敏,等. 半導体レーザおよびその製造方法. JP1996008394B2. 1996-01-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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