Semiconductor laser
文献类型：专利
| 作者 | SASAKI YOSHIMITSU; YAMASHITA SHIGEO; KANEKO TADAO; ONO YUICHI; KAJIMURA TAKASHI |
| 发表日期 | 1987-05-27 |
| 专利号 | JP1987115792A |
| 著作权人 | HITACHI LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To realize a practically usable laser element whose end faces are produced through working processes other than the cleavage process, by coating the laser element unsymmetrically such that the auxiliary end face used only for monitor light or the like has a larger difference in level than the other end face. CONSTITUTION:End faces of light emission output surface are produced by wet etching and dry etching. In each of these end faces, levels are differed between the surface of the light emitting region and the surface of the other region. The difference in level (difference 1) between the light emitting region and the other region in the principal light emission end face is smaller than the difference in level (difference 2) between the light emitting region and the other region in the other end face. The difference 1 is 5mum or less, while the difference 2 is 10mum or less. A low reflection film 6 is provided on the end face with the smaller difference in level. A high reflection film 8 is provided on the end face with larger difference in level. |
| 公开日期 | 1987-05-27 |
| 申请日期 | 1985-11-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83194]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI LTD |
| 推荐引用方式 GB/T 7714 | SASAKI YOSHIMITSU,YAMASHITA SHIGEO,KANEKO TADAO,et al. Semiconductor laser. JP1987115792A. 1987-05-27. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。