Semiconductor device
文献类型：专利
| 作者 | UNO TOMOAKI; YAKIDA HIDEKI; YOKOGAWA TOSHIYA; TAKAHASHI TOSHIYA |
| 发表日期 | 1988-11-17 |
| 专利号 | JP1988280484A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To obtain a short wavelength light stably, efficiently and moreover, easily without adjusting by a method wherein a layer consisting of nonlinear optical materials capable of generating light of a secondary high frequency is provided on the main surface of a substrate, is placed in the interior of a laser resonator and reflecting layers having a high reflectivity to a laser beam and having a low reflectivity to the secondary high frequency are placed on the layer. CONSTITUTION:A semiconductor laser structure is constituted of an AlGaAs material grown epitaxially on a p-type III-V GaAs compound semiconductor substrate 3 and nonlinear optical materials 5-8 (a p-type AlGaAs layer, an n-type AlGaAs layer, a p-type AlGaAs layer and an n-type AlGaAs layer) to generate a secondary high frequency consist of a ZnSSe II-VI compound semiconductor layer 10 grown epitaxially on the AlGaAs material. When a current is flowed toward an electrode 9 from an electrode 1, the current is luminesced in a GaAs active layer 12 and a laser oscillation of a wavelength of 0.82mum is generated between reflecting layers 11 having a high reflectivity. Light of the wavelength of 0.41mum of the secondary high frequency of a laser beam is generated in the layer 10 and is taken out to the exterior via the reflecting layers 11 having a low reflectivity as a secondary high-frequency output 14. |
| 公开日期 | 1988-11-17 |
| 申请日期 | 1987-05-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83195]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | UNO TOMOAKI,YAKIDA HIDEKI,YOKOGAWA TOSHIYA,et al. Semiconductor device. JP1988280484A. 1988-11-17. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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