Semiconductor light-emitting device
文献类型：专利
| 作者 | KONDO MASATO |
| 发表日期 | 1987-04-18 |
| 专利号 | JP1987084581A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light-emitting device |
| 英文摘要 | PURPOSE:To reduce leakage currents, and to obtain characteristics of a low threshold, high efficiency and a high output by using a semiconductor layer, which lattice-matches with InP, which has a refractive index smaller than InGaAsP in an active layer and which has forbidden band width largely than InGaAsP, in a buried section for a buried type semiconductor laser. CONSTITUTION:An Sn added N-type InP layer 12 as a buffer layer, a non-added InGaAsP layer 13 as an active layer, a cadmium (Cd) added P-type InP layer 14 as a clad layer and a non-added InGaAsP layer 16 as a cap layer are grown on a tin(Sn) added N-type InP substrate 11 in succession. An silicon dioxide (SiO2) layer 17 is deposited on the upper surface of a wafer on which each layer is grown, and mesa-etched, leaving it in approximately 5mum width. A ZnSexTe1-x (x=0.48) layer 15 lattice-matching with InP is grown as a buried layer, the SiO2 layer 17 is removed, and an element is completed through processes such as the formation of an electrode. The buffer layer 12 and the clad layer 14 fill the role of confining beams in the active layer by a refractive- index difference, and the cap layer 16 performs its roles for forming the ohmic contact of the P-type electrode and holding the shape of a mesa on mesa etching. |
| 公开日期 | 1987-04-18 |
| 申请日期 | 1985-10-08 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83196]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | KONDO MASATO. Semiconductor light-emitting device. JP1987084581A. 1987-04-18. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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