Semiconductor optical waveguide
文献类型：专利
| 作者 | NISHIWAKI YOSHIKAZU; MATSUOKA HARUJI; OKAMOTO KENJI |
| 发表日期 | 1983-09-12 |
| 专利号 | JP1983153364A |
| 著作权人 | SUMITOMO DENKI KOGYO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor optical waveguide |
| 英文摘要 | PURPOSE:To facilitate integration with a light emitting element, and to reduce loss at the using band of the optical waveguide by a method wherein the composition ratio of Ga, As of an upper and a lower clad layers, and the band gap of an waveguide layer are set at the proper values. CONSTITUTION:An N type In1-pGapAsqP1-q lower clad layer 2, an N type In1-xAsyP1-y waveguide layer 3 and a P type In1-uGauAsvP1-v upper clad layer 4 are formed in order on an N type InP substrate 1, the layer 4 is processed to have the stripe type, and ohmic electrodes 5, 6 are formed on the layer 4 and the substrate The mixing ratio of Ga, As of the layers 4, 2 is made smaller than that of the layer 3. Moreover the band gap of the layer 3 is set as to become larger than the band gap to the wavelength of incident light. According to this construction, the layer 3 having a high refractive index is interposed between the layers 2, 4 having low refractive indexes, to confine the light in the perpendicular direction to the face of the layer 3 can be attained, and guided light is concentrated in the region shown with the mark 9. Moreover by setting the band gap like this, incident light is not absorbed. |
| 公开日期 | 1983-09-12 |
| 申请日期 | 1982-03-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83206]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SUMITOMO DENKI KOGYO KK |
| 推荐引用方式 GB/T 7714 | NISHIWAKI YOSHIKAZU,MATSUOKA HARUJI,OKAMOTO KENJI. Semiconductor optical waveguide. JP1983153364A. 1983-09-12. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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