Semiconductor laser
文献类型：专利
| 作者 | UEHARA KUNIO |
| 发表日期 | 1988-06-21 |
| 专利号 | JP1988148693A |
| 著作权人 | NEC CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To carry out a wire bonding process without destroying characteristics and reliability by making a part where a conductive line of a semiconductor laser pellet is treated by the wire bonding process to be 170-250mum thick. CONSTITUTION:A semiconductor laser pellet 1 allows a side of an emission part 21 to be fused to a heat absorber and also allows a conductive line 5 to be treated by the wire bonding process at a part 11 which is located at the opposite side of an oscillation part 21 and is apart from an active region 2. In such a case, the thickness (t) of the laser pellet at the bonding location 11 is set up to 170-250mum. In this way, the above approach helps prevent characteristic variation that likely takes place before and after carrying out the wire bonding or avoid an adverse effect on reliability due to the conditions of the wire bonding process. |
| 公开日期 | 1988-06-21 |
| 申请日期 | 1986-12-12 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83208]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | UEHARA KUNIO. Semiconductor laser. JP1988148693A. 1988-06-21. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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