Manufacture of semiconductor laser
文献类型：专利
| 作者 | KASHIWADA YASUTOSHI; HIRAO MOTONAO; TSUJI SHINJI; FUJISAKI YOSHIHISA; NAKAMURA MICHIHARU |
| 发表日期 | 1985-02-01 |
| 专利号 | JP1985020594A |
| 著作权人 | HITACHI SEISAKUSHO KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To improve the distribution in a plane of the thickness of an epitaxial layer at the fabrication of the semiconductor laser element of a buried hetero structure by performing liquid-phase epitaxy with using the substrate in which each of the angles among those made by the surface of the single crystal substrate with a crystallographically main plane, which are in parallel and vertical directions to the direction of a stripe-form mesa are present within the specified range. CONSTITUTION:If the angle theta1 in a vertical direction to the direction of a stripe-form mesa is large, the formed mesa becomes unsymmetrical and has a bad influence upon the element characteristics. A permissible range of theta1 is as 0<=theta1 <=10. Meanwhile, the angle theta2 in a parallel direction to the direction of the stripe-form mesa can be relatively large in respect of the uniforming of distribution in a plane of the epitaxial layer. However, the reflectance of the laser light reflected by a mirror surface of the element declines as the difference from 90 deg. of the angle made by the mirror surface of the element formed on a cleavage plane with the projecting direction of the laser light in the element becomes larger. The reflectance of the laser light is required to be 80% or over and the upper limit of theta2 determined according to the above value is 2 degree and the lower limit, which is determined by the degree of effect upon uniforming of the thickness of the epitaxial layer, is as 0.5 degree <=theta2 in order to attain 0.1mum or under by sigma value. |
| 公开日期 | 1985-02-01 |
| 申请日期 | 1983-07-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83210]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | HITACHI SEISAKUSHO KK |
| 推荐引用方式 GB/T 7714 | KASHIWADA YASUTOSHI,HIRAO MOTONAO,TSUJI SHINJI,et al. Manufacture of semiconductor laser. JP1985020594A. 1985-02-01. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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