Semiconductor laser device
文献类型：专利
| 作者 | MATSUI KANEKI; KANEIWA SHINJI; MORIMOTO TAIJI; YAMAGUCHI MASAHIRO; TANETANI MOTOTAKA; MATSUMOTO AKIHIRO |
| 发表日期 | 1988-10-25 |
| 专利号 | JP1988258090A |
| 著作权人 | SHARP CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To obtain a high output power semiconductor laser device which is stable in a lateral mode as a basic mode parallel to a p-n junction while high power is outputted by a method wherein a continuous meander region, which discharges only high order lateral mode light out of a light guide path, is provided at a side wall interface of a stripe-like light guide path. CONSTITUTION:In a semiconductor laser device of refractive index wave guide type with a stripe-like light guide path, a continuous meander region which discharges only high order lateral mode light out of the light guide path is provided at a part of side wall of the light guide path at least. For example, a current block layer 2 about 1mum thick is laid onto a p-GaAs substrate 1 and groove 7 about 3mum in depth extending from one end face to the other end face of an oscillator is constructed thereon through an etching process. The groove 7 is formed so as to be constant in width w1 in an region a close to the end face as extending linearly and meander in such a manner wherein a side wall faces of the groove 7 meander minutely in opposite direction each other in a region b near the center of the oscillator. Moreover, the clad layer 3, the active layer 4, the clad layer 5, and the cap layer 6 are provided thereon. |
| 公开日期 | 1988-10-25 |
| 申请日期 | 1987-04-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83213]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SHARP CORP |
| 推荐引用方式 GB/T 7714 | MATSUI KANEKI,KANEIWA SHINJI,MORIMOTO TAIJI,et al. Semiconductor laser device. JP1988258090A. 1988-10-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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