Manufacture of semiconductor device
文献类型：专利
| 作者 | NOBUHARA HIROYUKI |
| 发表日期 | 1990-08-03 |
| 专利号 | JP1990197186A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To enable the formation of a diffraction grating possessed of a period small enough to amplify light by a method wherein the refractive index of the diffraction grating is made to vary alternately at a specified period. CONSTITUTION:A superlattice layer 2 is formed on a substrate, a protective layer 3 is deposited thereon, and then a positive resist film 4 is formed and an interference fringe is transferred onto it, which is developed, the film 3 is removed from the substrate, and thus an opening 4b is formed. Then, the layer 2 is removed, a recess 5a (width:W1) and a protrusion 5b are formed, a zinc diffused layer 6 is formed on the side of the protrusion 5b left unremoved, the layer 6 grows to be a disordered layer 6a whose width is W2 and which is formed of mixed crystal formed in such a manner that the superlattice is disordered by zinc, and the width W3 of a superlattice layer 7 which is not disordered becomes nearly equal to the width W1 of the recess 5a. And, a buried section 9 and a liquid crystal layer 8a are formed, whereby a diffraction grating layer 10 can be obtained, and the layers 10 and 3a constitute a waveguide layer 8 in which light rays are travel. Therefore, the refractive index of the layer 10 changes alternately. |
| 公开日期 | 1990-08-03 |
| 申请日期 | 1989-01-26 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83215]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NOBUHARA HIROYUKI. Manufacture of semiconductor device. JP1990197186A. 1990-08-03. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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