半導体レーザ装置の製造方法
文献类型：专利
| 作者 | 多田 邦雄; 中野 義昭; 羅 毅; 井上 武史; 岩岡 秀人 |
| 发表日期 | 1999-03-26 |
| 专利号 | JP2903321B2 |
| 著作权人 | 光計測技術開発株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置の製造方法 |
| 英文摘要 | PURPOSE:To obtain a semiconductor laser device capable of generating induced emission light by eliminating a part of an active layer in conformity with the cycle of a diffraction grating and hence forming the diffraction grating on the active layer. CONSTITUTION:An active layer 7 is designed to be eliminated in conformity with the cycle of a diffraction cycle. In a manufacturing process which comprises a first process to grow a cladding layer 3, a second process which grows the active layer on the cladding layer 3, and a third process which grows a cladding layer 8 on the active layer 7 where the second process includes a process to form the active layer and a protection layer for the active layer, the following processes are provided between the second process and the third process. They include a process which provides a mask 15 on the layer 7 in conformity with the cycle of the diffraction grating, a process which eliminates an unmasked part of the active layer by gas phase etching, a process which selectively grows an isolated layer 16 on an eliminated part, and a mask which eliminates the mask 15 after this process. Under the structure stated above, the diffraction grating is formed on the active layer itself, which eliminates any possibility to produce defects upon the semiconductor structure of the active layer even when the diffraction layer is formed thereon. |
| 公开日期 | 1999-06-07 |
| 申请日期 | 1989-07-18 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83218]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | 光計測技術開発株式会社 |
| 推荐引用方式 GB/T 7714 | 多田 邦雄,中野 義昭,羅 毅,等. 半導体レーザ装置の製造方法. JP2903321B2. 1999-03-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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