Semiconductor light emitting device
文献类型：专利
| 作者 | NISHITANI YORIMITSU |
| 发表日期 | 1985-07-25 |
| 专利号 | JP1985140887A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor light emitting device |
| 英文摘要 | PURPOSE:To improve the yield by stabilizing the shape of an active layer by a method wherein a V-shaped groove is formed in a substrate by etching, and the tip of the groove is further etched. CONSTITUTION:An N-InP buffer layer 2 and a Zn-doped P type InP layer 3a are formed on the N-InP substrate 1, and the V-shaped groove 4 is formed by etching. Next, a node 14 is formed by forming the second gradient 13a different from a gradient 4a by etching the tip of the groove 4. Next, clad layers 3b and 3b' are formed by laminating N-InP on the groove 13 and the P-InP layer 3a, and active layers 5a and 5a' made of four elements of undoped InGaAsP are further grown in liquid phase so as to drop in the groove 4. Thereafter, P- InGaAsP of a contact layer is formed in such a manner that the groove 4 is filled up with a P-InP clad layer 6, and contact electrodes 9 and 10 are formed via insulation layer 8. |
| 公开日期 | 1985-07-25 |
| 申请日期 | 1983-12-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83220]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | NISHITANI YORIMITSU. Semiconductor light emitting device. JP1985140887A. 1985-07-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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