Manufacture of semiconductor device
文献类型：专利
| 作者 | NAKAI KENYA |
| 发表日期 | 1988-09-26 |
| 专利号 | JP1988229891A |
| 著作权人 | FUJITSU LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor device |
| 英文摘要 | PURPOSE:To realize the formation of a deeply buried layer through a vapor growth method wherein a semiconductor substrate surface exposed by etching is selectively coated with a mask, and a second semiconductor layer is grown after a semiconductor layer is so grown that the layer surface makes an obtuse angle with the mask surface. CONSTITUTION:An n-type clad layer 2, an active layer 3, a p-type clad layer 4, and a p-type contact layer 5 are successively grown on an n-type semiconductor substrate Next, a mask 11 is selectively formed thereon, and etching is performed onto layers 5-2 to reach under the mask 11 for the formation of a recessed part. A process follows, wherein a mask 12 is selectively formed on the mask 11 for the growth of a buried layer 6a. In this case, a vapor growth surface is so controlled that the layer 6a surface is grown to be a trapezoid making an obtuse angle with the mask 12 surface. Next, the mask 12 is removed for the formation of a semiconductor 6b on the layers 6 and 2. By these processes, a deeply buried layer is flatly grown through a vapor growth method. |
| 公开日期 | 1988-09-26 |
| 申请日期 | 1987-03-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83225]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LTD |
| 推荐引用方式 GB/T 7714 | NAKAI KENYA. Manufacture of semiconductor device. JP1988229891A. 1988-09-26. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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