Semiconductor laser device
文献类型：专利
| 作者 | KUDO KAZUHIRO; OKI YOSHIMASA; TOYODA YUKIO |
| 发表日期 | 1986-03-29 |
| 专利号 | JP1986061486A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | PURPOSE:To add a stable high sole longitudinal mode property by forming the active layer of a semiconductor laser or part of a multiplex quantum well structure of a waveguide at random to form an inner reflecting surface. CONSTITUTION:An Se-doped N type GaAs buffer layer 2, an Se-doped N type Al0.4Ga0.6As clad layer 3, an active layer 4 having a multiplex quantum well structure of 30 layers of non-doped AlAs layers and non-doped GaAs layers, an Se-doped N type Al0.4Ga0.6As clad layer 5 and an Se-doped N type GaAs cap layer 6 are sequentially epitaxially grown by an organic metal decomposing method on a semi-insulating GaAs layer substrate Then, with an SiO2 film as a mask Zn is diffused to a semi-insulating GaAs substrate, and a wafer in which a superlattice structure is formed at random in a Zn-diffused region 7 is manufacture. P type electrodes 8 and N type electrodes 9 are formed, a cap layer between the both electrodes is removed by etching, and a semicon ductor laser element is manufactured by cleaving. |
| 公开日期 | 1986-03-29 |
| 申请日期 | 1984-09-03 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83227]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | KUDO KAZUHIRO,OKI YOSHIMASA,TOYODA YUKIO. Semiconductor laser device. JP1986061486A. 1986-03-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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