Semiconductor laser device
文献类型：专利
| 作者 | KIDOGUCHI, ISAO; OHNAKA, KIYOSHI; ADACHI, HIDETO; KAMIYAMA, SATOSHI; MANNOU, MASAYA; UENOYAMA, TAKESHI |
| 发表日期 | 1997-02-04 |
| 专利号 | US5600667 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device having an active layer, a pair of cladding layers interposing the active layer and a multi-quantum barrier provided between one of the pair of cladding layers and the active layer is provided. The multi-quantum barrier includes barrier layers and well layers being alternated with each other. Thickness, energy band gap, or impurity concentration of at least one of the barrier layers and well layers in the multi-quantum barrier changes with the distance from the active layer, thereby providing a stable function of reflecting carriers overflowing from the active layer back to the active layer. |
| 公开日期 | 1997-02-04 |
| 申请日期 | 1994-04-05 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83235]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | KIDOGUCHI, ISAO,OHNAKA, KIYOSHI,ADACHI, HIDETO,et al. Semiconductor laser device. US5600667. 1997-02-04. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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