Semiconductor laser
文献类型：专利
| 作者 | MISE KAZUAKI; TSUCHIYA TOSHIO |
| 发表日期 | 1986-04-08 |
| 专利号 | JP1986067981A |
| 著作权人 | ANRITSU CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | PURPOSE:To obtain the laser of a stable lateral mode by a method wherein a buffer layer, an active layer, and a clad layer are laminated and grown in a III-V group compound semiconductor, after which these are made into a mesa structure and further the active layer in the middle is etched and recessed toward the center and the first and second buried layers are arranged in the mesa part with filling the recess. CONSTITUTION:On a P type InP substrate 21 having a (100) plane, a P type InP buffer layer 22, an InGaAsP active layer 23, and an N type InP clad layer 24 are laminated and grown. Nextly an insulating film mask 25 of a strip form of direction is arranged on the layer 24 followed by etching to form the mesa grooves recessed into the layer 22 on both sides of the mask 25. After that, a width of the remaining active layer 23 is narrowed by selective etching and horizontal grooves 26a and 26b are produced on both sides of the layer 23. Then after removing the mask 25, the first N type InP buried layer 27 which enters into the grooves 26a and 26b and the second P type InP buried layer 28 which is levelled to a surface of the layer 24 are deposited in the mesa part. |
| 公开日期 | 1986-04-08 |
| 申请日期 | 1984-09-11 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83239]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | ANRITSU CORP |
| 推荐引用方式 GB/T 7714 | MISE KAZUAKI,TSUCHIYA TOSHIO. Semiconductor laser. JP1986067981A. 1986-04-08. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。