Semiconductor laser and method of manufacturing the same
文献类型：专利
| 作者 | YAMAMOTO, TSUYOSHI; SHOJI, HAJIME; WATANABE, TAKAYUKI; FUJII, TAKUYA; KOBAYASHI, HIROHIKO |
| 发表日期 | 2003-01-16 |
| 专利号 | US20030012240A1 |
| 著作权人 | FUJITSU LIMITED |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and method of manufacturing the same |
| 英文摘要 | There is provided a semiconductor laser which comprises a first cladding layer formed of compound semiconductor having first conductivity type impurity and having a mesa-shaped projection, an active layer formed on the projection like a stripe and having side surfaces which are inclined at an angle of more than 70 degrees but less than 90 degrees relative to an upper surface of the first cladding layer, buried layers formed on both sides of the projection and having second conductivity type impurity, current blocking layers each having one end which contacts a virtual surface obtained by extending upward a side surface of the active layer and having a first facet which extends downward from the one end and is inclined by about 55 degrees relative to the upper surface of the first cladding layer and formed on each buried layer and having the first conductivity type impurity, and second cladding layers formed on the current blocking layers and the active layer and having the second conductivity type impurity. |
| 公开日期 | 2003-01-16 |
| 申请日期 | 1999-12-03 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83243]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU LIMITED |
| 推荐引用方式 GB/T 7714 | YAMAMOTO, TSUYOSHI,SHOJI, HAJIME,WATANABE, TAKAYUKI,et al. Semiconductor laser and method of manufacturing the same. US20030012240A1. 2003-01-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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