Semiconductor laser device
文献类型：专利
| 作者 | ORITA, KENJI; TAKAYAMA, TORU |
| 发表日期 | 2004-03-16 |
| 专利号 | US6707836 |
| 著作权人 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | A semiconductor laser device of the present invention has a second optical guiding layer provided with a diffraction grating in a portion to be a DBR region and a current blocking layer provided with a stripe-shaped window as a current application portion. A region including this stripe-shaped window serves as a waveguide channel region. Also, in the semiconductor laser device of the present invention, the waveguide channel region in the DBR region is not provided with a contact layer or a p-electrode, and a region other than the waveguide channel region in the DBR region is provided with the contact layer and the p-electrode. By applying current from the p-electrode to the DBR region, the emission wavelength is controlled. |
| 公开日期 | 2004-03-16 |
| 申请日期 | 2001-12-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83247]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
| 推荐引用方式 GB/T 7714 | ORITA, KENJI,TAKAYAMA, TORU. Semiconductor laser device. US6707836. 2004-03-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。