Semiconductor device and manufacture thereof
文献类型：专利
| 作者 | OGURA MOTOTSUGU; HASE NOBUYASU; TAKAHASHI YASUHITO |
| 发表日期 | 1986-08-25 |
| 专利号 | JP1986191089A |
| 著作权人 | MATSUSHITA ELECTRIC IND CO LTD |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device and manufacture thereof |
| 英文摘要 | PURPOSE:To modulate each laser independently, in a monolithic, multiple-wave, semiconductor laser, by electrically isolating the same multiplex quantum-well layer, changing the shapes of the well layers locally, thereby emitting a plurality of desired different wavelengths of emitted light simply. CONSTITUTION:On an nGaAs substrate 6, an nGaAs layer 7 as a buffer layer, an nGa1-yAlyAs layer as a clad layer 8, an MQW layer 9 as an active layer, a pGa1-yAlyAs layer as a clad layer 10, and a pGaAs layer 11 as a cap layer are sequentially grown. After the epitaxial growth, a laser beam 14 and a laser beam 15 are locally projected. Thus the temperature is increased close to 1,000 deg.C. The annealing degrees in a region C and a region D are different. Then, protons 16 are implanted to the boundary between the region C and the region D from the surface. The proton-implanted region becomes an electrically isolating region 17. The active layer of each semiconductor laser is electrically independent and can be independently modulated. |
| 公开日期 | 1986-08-25 |
| 申请日期 | 1985-02-20 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83248]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MATSUSHITA ELECTRIC IND CO LTD |
| 推荐引用方式 GB/T 7714 | OGURA MOTOTSUGU,HASE NOBUYASU,TAKAHASHI YASUHITO. Semiconductor device and manufacture thereof. JP1986191089A. 1986-08-25. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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