Semiconductor laser device
文献类型：专利
| 作者 | ITAYA, KAZUHIKO; HATAKOSHI, GENICHI; NITTA, KOICHI |
| 发表日期 | 1994-08-30 |
| 专利号 | US5343486 |
| 著作权人 | KABUSHIKI KAISHA TOSHIBA |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser device |
| 英文摘要 | According to this invention, a semiconductor laser device includes a compound semiconductor substrate, a double hetero structure formed on the compound semiconductor substrate and having an active layer and first and second cladding layers which interpose the active layer, a current blocking region formed in one facet portion of the double hetero structure in a resonator direction. A reflecting layer is arranged on the other facet of the double hetero structure in the resonator direction and has a reflectance higher than that of a natural cleavage surface, thereby shifting the oscillation wavelength of the laser device to a long wavelength side with respect to the wavelength of spontaneous radiation emitted from one facet of the double hetero structure. |
| 公开日期 | 1994-08-30 |
| 申请日期 | 1992-10-19 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83249]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | KABUSHIKI KAISHA TOSHIBA |
| 推荐引用方式 GB/T 7714 | ITAYA, KAZUHIKO,HATAKOSHI, GENICHI,NITTA, KOICHI. Semiconductor laser device. US5343486. 1994-08-30. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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