Manufacture of semiconductor laser
文献类型：专利
| 作者 | KUMAI TSUGIO; ISHIKAWA HIROSHI |
| 发表日期 | 1984-10-16 |
| 专利号 | JP1984181589A |
| 著作权人 | FUJITSU KK |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Manufacture of semiconductor laser |
| 英文摘要 | PURPOSE:To obtain excellent characteristics of a VSB laser as well as to enhance the reproducibility of a V-shaped groove and the manufacturing yield of the laser by a method wherein the surface of a semiconductor substrate is treated with a treating agent, which is controllable the etching rate of the substrate under the interface between the substrate and a mask, before the etching mask, which is used at the forming time of the V-shaped groove, is applied on the semiconductor substrate. CONSTITUTION:At the manufacturing time of a VSB laser, which is made comprising an active layer embedded in a stripe-shaped groove, the surface of a semiconductor substrate is treated with a treating agent which is controllable the etching rate of the substrate under the interface between the substrate and a mask, before the etching mask, which is used when the groove is formed by performing an etching, is applied on the semiconductor substrate. For example, an N-InP buffer layer 2 and a P-InP current preventing layer 3 are epitaxially grown in order on an N-InP substrate 1 having a (001) face. Then, the whole surface of the layer 3 is treated with concentrated hydrogen peroxide, which is used as a treating agent, in such a way as has been indicated by arrow marks. |
| 公开日期 | 1984-10-16 |
| 申请日期 | 1983-03-31 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83252]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | KUMAI TSUGIO,ISHIKAWA HIROSHI. Manufacture of semiconductor laser. JP1984181589A. 1984-10-16. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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