Semiconductor device
文献类型：专利
| 作者 | TOMITA KAZUYOSHI; HASHIMOTO MASAFUMI |
| 发表日期 | 1990-08-28 |
| 专利号 | JP1990215169A |
| 著作权人 | TOYOTA CENTRAL RES & DEV LAB INC |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor device |
| 英文摘要 | PURPOSE:To enable a crystal layer to grow on a substrate without giving any mechanical and thermal damage to the substrate so as to form an element structure directly on a transparent substrate by a method wherein an AlGaAs single crystal layer to which Te is added is made to grow on a GaP single crystal substrate of a semiconductor light emitting device or a photodetective device. CONSTITUTION:An N-type buffer layer 22 formed of an N-type Al0.4Ga0.6As layer doped with tellurium Te is deposited as thick as specified on a flattened and cleaned GaP single crystal substrate 21 of a light emitting diode as a semiconductor device, and an N-type clad layer 23 formed of an N-type Al0.7Ga0.3As layer doped with Ge is formed as thick as specified. Moreover, a P-type active layer 24 formed of an Al0.35Ga0.65As layer doped with Zn is deposited as thick as specified, and a P-type clad layer 25 of in Al0.7Ga0.3As layer doped with Zn is formed as thick as specified, and each of the layers is made to grow epitaxially in succession. Then, a P-side electrode 26 and an N-side electrode are provided, and thus a double heterojunction type light emitting diode can be obtained. |
| 公开日期 | 1990-08-28 |
| 申请日期 | 1989-02-15 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83255]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | TOYOTA CENTRAL RES & DEV LAB INC |
| 推荐引用方式 GB/T 7714 | TOMITA KAZUYOSHI,HASHIMOTO MASAFUMI. Semiconductor device. JP1990215169A. 1990-08-28. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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