Semiconductor laser
文献类型：专利
| 作者 | NAKAMURA, NAOKI |
| 发表日期 | 2015-04-14 |
| 专利号 | US9008140 |
| 著作权人 | MITSUBISHI ELECTRIC CORPORATION |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor laser |
| 英文摘要 | A semiconductor laser includes: a p-type semiconductor substrate; a ridge having an active layer and cladding layers on the semiconductor substrate; a current blocking layer embedding side surfaces of the ridge; and an n-type contact layer on the ridge and the current blocking layer. The current blocking layer includes a first p-type layer, an n-type layer or a hole-trapping insulating semiconductor layer, a second p-type layer, a diffusion inhibiting layer, and a third p-type layer stacked, in order, from the semiconductor substrate. The n-type contact layer includes a p-type inverted region located in a portion of the n-type contact layer, in contact with the third p-type layer. Dopants in the third p-type layer diffuse into the p-type inverted region. The diffusion inhibiting layer is an undoped semiconductor material or a semi-insulating semiconductor material and inhibits dopants in the third p-type layer from being diffused into the active layer. |
| 公开日期 | 2015-04-14 |
| 申请日期 | 2013-03-13 |
| 状态 | 授权 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83261]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | MITSUBISHI ELECTRIC CORPORATION |
| 推荐引用方式 GB/T 7714 | NAKAMURA, NAOKI. Semiconductor laser. US9008140. 2015-04-14. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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