半導体レーザ装置及びその製造方法
文献类型：专利
| 作者 | 近藤 正樹; 佐々木 和明; 森本 泰司; 松本 晃広; 細羽 弘之; 松井 完益; 山本 三郎 |
| 发表日期 | 1995-11-22 |
| 专利号 | JP1995109926B2 |
| 著作权人 | シャープ株式会社 |
| 国家 | 日本 |
| 文献子类 | 授权发明 |
| 其他题名 | 半導体レーザ装置及びその製造方法 |
| 英文摘要 | PURPOSE:To prevent an active layer from being curved by a method wherein two subgrooves or more which do not penetrate a current stopping layer are formed in each of both sides of a striped groove. CONSTITUTION:An N-type GaAs layer which is used as a current stopping layer 2 is grown on a flat P-type GaAs substrate 1 and thereafter, a photoresist 9 is applied and a striped pattern is exposed and developed on the central part of the surface of the layer 2. Then, an etching is performed using a sulfuric etchant to form a main channel 10a and thereafter, a multitude of striped patterns are exposed and developed without removing the photoresist 9. Then, an etching is performed on the layer 2 to form dummy channels 10b. Then, the resist 9 is removed and a P-type GaAlAs clad layer 3 is formed. Then, a GaAlAs active layer 4, an N-type GaAlAs clad layer 5 and an N-type GaAs contact layer 6 are piled successively and after a heterostructure is formed, electrodes 8 and 7 are respectively formed on the rear of the substrate 1 and on the surface of the layer 6. Thereby, a thin layer is grown on both sides of a striped groove without curving the active layer over the groove and a semiconductor laser having a structure which can be easily manufactured can be obtained. |
| 公开日期 | 1995-11-22 |
| 申请日期 | 1989-04-28 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83271]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | シャープ株式会社 |
| 推荐引用方式 GB/T 7714 | 近藤 正樹,佐々木 和明,森本 泰司,等. 半導体レーザ装置及びその製造方法. JP1995109926B2. 1995-11-22. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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