Semiconductor laser and manufacture thereof
文献类型：专利
| 作者 | OSHIMA HIROYUKI |
| 发表日期 | 1987-10-29 |
| 专利号 | JP1987248279A |
| 著作权人 | SEIKO EPSON CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser and manufacture thereof |
| 英文摘要 | PURPOSE:To improve the light-emitting efficiency while stabilizing the characteristics of a semiconductor laser, by arranging clad layers having a large energy gap on both sides of a stripe active layer while providing a current- injecting layer on the clad layer directly over the active layer, the current- injecting layer having an opposite conductivity type to that of a current- constricting layer. CONSTITUTION:A buffer layer 102 is provided on an N-type GaAs substrate 10 A first clad layer 103 of N-AlGaAs, a stripe active layer 104 of I-GaAs and a second clad layer 106 of P-AlGaAs are provided on the layer 102 to provide a double hetero structure. Further, third clad layers 105 of I-AlGaAs are formed into a planar shape on both sides of the stripe layer 104. A current- injecting layer 107 of P-GaAs is provided on the layer 106 directly over the layer 104, while current-constricting layers 108 are formed into a planar shape on both sides of the layer 107 so as to improve the efficiency of injecting carriers into the active layer 104. |
| 公开日期 | 1987-10-29 |
| 申请日期 | 1986-04-21 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83273]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | SEIKO EPSON CORP |
| 推荐引用方式 GB/T 7714 | OSHIMA HIROYUKI. Semiconductor laser and manufacture thereof. JP1987248279A. 1987-10-29. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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