Semiconductor laser with monitor
文献类型：专利
| 作者 | SAITO HIDEHO; FUKUDA MITSUO; NOGUCHI ETSUO; TSUZUKI NOBUYORI |
| 发表日期 | 1988-01-20 |
| 专利号 | JP1988013391A |
| 著作权人 | NIPPON TELEGR & TELEPH CORP |
| 国家 | 日本 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser with monitor |
| 英文摘要 | PURPOSE:To remove the lowering of reflectivity on a laser-side end surface, and to prevent reflection and return by a monitor-side end surface by making the laser-side end surface perpendicular to the interface between a clad layer and an active layer and obliquely forming the monitor-side end surface to the interface at an angle where reflected returned beams do not intrude to a laser section. CONSTITUTION:For shape a laser section 7 and a monitor section 8 to an n-InP substrate 1, an isolation trench, which has a laser-side end surface 10 vertically formed to the interfaces of an n-InP clad layer 2 and a p-InP clad layer 4 and an undoped InGaAsP active layer 3 and a monitor-side end surface 11 aslant shaped to the interfaces at an angle, where reflected returned beams do not enter to the laser section, and depth of which reaches up to at least the first conductivity type clad layer 2, is formed. Reflectivity on the laser-side end surface 10 is increased, and the characteristics of the semiconductor laser 7 are improved. The reflected returned beams of a laser do not intrude to the semiconductor laser 7, and the semiconductor laser 7 is operated stably. |
| 公开日期 | 1988-01-20 |
| 申请日期 | 1986-07-04 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83274]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON TELEGR & TELEPH CORP |
| 推荐引用方式 GB/T 7714 | SAITO HIDEHO,FUKUDA MITSUO,NOGUCHI ETSUO,et al. Semiconductor laser with monitor. JP1988013391A. 1988-01-20. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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