Semiconductor laser device and method for fabricating the same
文献类型：专利
| 作者 | HONKAWA, YUKIO; ONO, TAKAHIRO; HATTORI, SATOSHI; SATO, YOSHIHIRO |
| 发表日期 | 2005-01-06 |
| 专利号 | US20050002431A1 |
| 著作权人 | THE FURUKAWA ELECTRIC CO., LTD. |
| 国家 | 美国 |
| 文献子类 | 发明申请 |
| 其他题名 | Semiconductor laser device and method for fabricating the same |
| 英文摘要 | A method for fabricating a buried semiconductor laser device including the steps of: forming a mesa structure including a bottom cladding layer, an active layer and a top cladding layer overlying an n-type semiconductor substrate; and forming a current confinement structure by growing a p-type current blocking layer and an n-type current blocking layer on each side surface of the mesa structure and on a skirt portion extending from the each side surface, the p-type current blocking layer being fabricated by using a raw material gas containing a group III element gas and a group V element gas at a molar ratio between 60 and 350 inclusive. In this method, the semiconductor laser device including the current confinement structure with the specified leakage current path width can be fabricated with the excellent reproducibility. |
| 公开日期 | 2005-01-06 |
| 申请日期 | 2004-06-16 |
| 状态 | 失效 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/83282]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | THE FURUKAWA ELECTRIC CO., LTD. |
| 推荐引用方式 GB/T 7714 | HONKAWA, YUKIO,ONO, TAKAHIRO,HATTORI, SATOSHI,et al. Semiconductor laser device and method for fabricating the same. US20050002431A1. 2005-01-06. |
入库方式： OAI收割
来源：西安光学精密机械研究所
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